SCT2750NYTB

Manufacturer Part	SCT2750NYTB
Manufacturer	Rohm Semiconductor
Description	SICFET N-CH 1700V 5.9A TO268
Category	Discrete Semiconductor Products
RoHS	Lead free / RoHS Compliant
Warranty	365 days
Datasheet	-

Type	Description
Product Status:	Active
FET Type:	N-Channel
Technology:	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):	1700 V
Current - Continuous Drain (Id) @ 25°C:	5.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	18V
Rds On (Max) @ Id, Vgs:	975mOhm @ 1.7A, 18V
Vgs(th) (Max) @ Id:	4V @ 630µA
Gate Charge (Qg) (Max) @ Vgs:	17 nC @ 18 V
Vgs (Max):	+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds:	275 pF @ 800 V
FET Feature:	-
Power Dissipation (Max):	57W (Tc)
Operating Temperature:	175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	TO-268
Package / Case:	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

We provide 90 days warranty;
The Pre-Shipment Inspection (PSI) will be applied;
If some of the items you received aren't of perfect quality, we would responsibly arrange your refund or replacement. But the items must remain their original condition;
If you don't receive the item in 25 days, just let us know, a new package or replacement will be issued.
If your item is significantly different from our product description, you can A: Return it and get a full refund, or B: Get a partial refund and keep the item.
Taxes & VAT will not be included;