IPG20N10S4L22ATMA1

Manufacturer Part	IPG20N10S4L22ATMA1
Manufacturer	Infineon Technologies
Description	MOSFET 2N-CH 8TDSON
Category	Discrete Semiconductor Products
RoHS	Lead free / RoHS Compliant
Warranty	365 days
Datasheet	-

Type	Description
Product Status:	Active
FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	100V
Current - Continuous Drain (Id) @ 25°C:	20A
Rds On (Max) @ Id, Vgs:	22mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:	2.1V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:	27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	1755pF @ 25V
Power - Max:	60W
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-PowerVDFN
Supplier Device Package:	PG-TDSON-8-4

We provide 90 days warranty;
The Pre-Shipment Inspection (PSI) will be applied;
If some of the items you received aren't of perfect quality, we would responsibly arrange your refund or replacement. But the items must remain their original condition;
If you don't receive the item in 25 days, just let us know, a new package or replacement will be issued.
If your item is significantly different from our product description, you can A: Return it and get a full refund, or B: Get a partial refund and keep the item.
Taxes & VAT will not be included;